Title :
CuInSe2/CdS simulation and modeling
Author :
Rothwarf, A. ; Gonchar, I. ; Melnikova, Y. ; Shapiro, F. ; Lommasson, T. ; Arya, R.R.
Author_Institution :
ECE Dept., Drexel Univ., Philadelphia, PA, USA
Abstract :
A simulator that can deduce the carrier density and diffusion length from experimental QE (quantum efficiency) curves at different applied voltages has been developed, and applied to CIS solar cells produced by a novel sputtering approach. An analytic expression for the dark diode current of an insulating graded bandgap solar cell has been obtained for the case of the gap increasing linearly away from the junction. The results indicate a diode factor ranging from ~1.6 at low voltages to 2 at higher voltages. An increase in open-circuit voltage is expected to be roughly half of the increase in the energy gap, subject, however, to a maximum value set by the smaller of the built-in voltages in the conduction or valence bands
Keywords :
II-VI semiconductors; cadmium compounds; carrier density; carrier lifetime; copper compounds; energy gap; indium compounds; semiconductor device models; solar cells; ternary semiconductors; CuInSe2-CdS solar cells; carrier density; conduction bands; dark diode current; diffusion length; energy gap; insulating graded bandgap; open-circuit voltage; quantum efficiency; semiconductor device models; sputtering; valence bands; Absorption; Charge carrier density; Composite materials; Computational Intelligence Society; Grain size; Least squares methods; Numerical analysis; Photonic band gap; Space charge; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169396
