Title :
A single-crystal silicon DC-40 GHz RF MEMS switch
Author :
Fruehling, Adam ; Pimpinella, Rick ; Nordin, Ron ; Peroulis, Dimitrios
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Abstract :
This paper presents a new DC-40 GHz RF MEMS switch whose moving part is made of single-crystal silicon (SCS). Unlike thin-film metals commonly employed in RF MEMS switches, SCS is essentially defect-free, has well known and repeatable material properties and is virtually stress free. This makes the switch design insensitive to process variations and amenable to high-yield manufacturing. Measured RF switches exhibit an on state insertion loss of less than 0.3 dB and an off state isolation of higher than 30 dB up to 40 GHz. Measured switching time is less than 4 us.
Keywords :
elemental semiconductors; microswitches; microwave switches; millimetre wave devices; silicon; RF MEMS switch; Si; frequency 0 GHz to 40 GHz; off-state isolation; on-state insertion loss; single-crystal silicon; switch design; Loss measurement; Manufacturing processes; Material properties; Process design; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Stress; Switches; Transistors;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5166026
