Formation of very low-resistance aluminum layer on AlN ceramics by TEA CO/sub 2/ laser irradiation for direct laser writing of electric circuit

Author

Takahashi, Akihisa ; Yabe, Hiroyuki ; Obara, Minoru

Author_Institution

Dept. of Electr. Eng., Keio Univ., Yokohama, Japan

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

262

Abstract

To make a low electrical resistance Al line, i.e. to make a thick Al layer, we selected a transversely excited atmospheric (TEA) CO/sub 2/ laser with a long penetration depth. AlN shows a moderate absorption coefficient in the mid infrared range over 10 /spl mu/m and it is possible to modify the surface of the AlN ceramics by irradiation with a TEA CO/sub 2/ laser. The technique is applicable to the drawing of an electrical circuit. The aluminum thickness dependence on irradiation shot number is also presented.

Keywords

aluminium compounds; ceramics; hybrid integrated circuits; integrated circuit interconnections; integrated circuit metallisation; laser beam applications; 10.8 mum; Al; Al thickness dependence; AlN; AlN ceramics; TEA CO/sub 2/ laser irradiation; direct laser writing; electric circuit; irradiation shot number; long penetration depth; low electrical resistance Al line; mid IR absorption coefficient; surface modification; thick Al layer; very low-resistance Al layer; Absorption; Aluminum; Artificial intelligence; Ceramics; Electric resistance; Laser beams; Laser sintering; Optical pulses; Pulsed laser deposition; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571653

Filename

571653