DocumentCode :
2558659
Title :
Nanocrystalline diamond RF MEMS capacitive switch
Author :
Balachandran, S. ; Hoff, D.M. ; Kumar, A. ; Weller, T.M.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fYear :
2009
fDate :
7-12 June 2009
Firstpage :
1657
Lastpage :
1660
Abstract :
This paper presents an RF MEMS capacitive switch using nanocrystalline diamond as the dielectric. The switch is electro-statically actuated and small signal measurements are presented in the frequency range of 1-65 GHz. The measured insertion loss in the up-state is ~ 1.1 dB at ~50 GHz with 30 dB isolation in the off-state. Dielectric characterization was performed using the Corona-Kelvin technique and standard I-V testing on comparison nitride and diamond test fixtures. The leaky nature of the diamond films provides a potential solution to reliability issues related to dielectric charging.
Keywords :
diamond; dielectric materials; microswitches; nanoelectronics; Corona-Kelvin technique; I-V testing; diamond films; dielectric characterization; dielectric charging; insertion loss; nanocrystalline diamond RF MEMS capacitive switch; Dielectric loss measurement; Dielectric measurements; Fixtures; Frequency measurement; Insertion loss; Loss measurement; Performance evaluation; Radiofrequency microelectromechanical systems; Switches; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2009.5166032
Filename :
5166032
Link To Document :
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