Title :
Polarization-insensitive multiple-quantum-well traveling-wave electroabsorption modulators with 18 GHz bandwidth and 1.2 V driving voltage at 1.55 /spl mu/m
Author :
Zhang, S.Z. ; Yi-Jen Chiu ; Abraham, P. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Traveling-wave electroabsorption modulators (TEAM) fabricated with InGaAsP/InGaAsP quantum-wells show a modulation bandwidth of 18 GHz, and driving voltages of 1.20 and 1.28 V for 20 dB extinction ratio for TE and TM modes respectively at 1.55 /spl mu/m.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; microwave photonics; optical communication equipment; optical planar waveguides; quantum well devices; 1.2 V; 1.55 micron; 18 GHz; CPW electrode; InGaAsP-InGaAsP; InGaAsP/InGaAsP quantum-wells; TE modes; TM modes; TW electroabsorption modulators; integrated waveguides; microwave response; photonic links; polarization-insensitive MQW modulators; Bandwidth; Extinction ratio; High speed optical techniques; Optical fiber devices; Optical fiber polarization; Optical saturation; Optical waveguides; Quantum well devices; Tellurium; Voltage;
Conference_Titel :
Microwave Photonics, 1998. MWP '98. International Topical Meeting on
Conference_Location :
Princeton, NJ, USA
Print_ISBN :
0-7803-4936-9
DOI :
10.1109/MWP.1998.745484
