Title :
The effect of thermoelastic internal friction on the Q of micromachined silicon resonators
Author_Institution :
Kearfott Guidance & Navigation Corp., Little Falls, NJ, USA
Abstract :
Resonator damping measurements made on flexural beams micromachined from single-crystal silicon are described. A theoretical analysis of thermoelastic internal friction that accurately predicts the measurements that were taken is described. The results of these tests show that thermoelastic internal friction is a fundamental damping mechanism that can determine the quality of high-Q resonators over a range of operating conditions. Single-crystal silicon beams were tested under vacuum conditions over a range of frequencies from 80 kHz to 1.6 MHz and over a range of temperatures from 300 K to 400 K. measured values of Q varied from 10000 to more than 70000 and showed good agreement with theoretical estimates of thermoelastic internal friction. It is concluded that thermoelastic internal friction is a measurable phenomenon in micromachined flexures and should be considered when designing, testing, and evaluating miniature resonators for solid-state sensors.<>
Keywords :
electric sensing devices; elemental semiconductors; micromechanical devices; resonators; silicon; thermoelasticity; 300 to 400 K; 80 kHz to 1.6 MHz; Si; damping mechanism; flexural beams; high-Q resonators; micromachined flexures; micromachined resonators; miniature resonators; resonator damping measurements; solid-state sensors; thermoelastic internal friction; Damping; Estimation theory; Frequency estimation; Frequency measurement; Friction; Q measurement; Silicon; Temperature distribution; Testing; Thermoelasticity;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1990. 4th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
DOI :
10.1109/SOLSEN.1990.109810