• DocumentCode
    2558914
  • Title

    Advances in novel deposition technology for CuInSe2 solar cells

  • Author

    Attar, G. ; Cai, L. ; Morel, D.L. ; Lai, J.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1190
  • Abstract
    The authors have fabricated low-defect-level CIS using a novel deposition technology which avoids use of H2Se. Thin-film transistors have been fabricated and are serving as an effective tool in understanding and advancing junction performance. Contamination effects at junction interfaces due to instabilities in the CIS surface and defect generation associated with ZnO deposition have been observed and are limiting ZnO/CIS heterojunction performance in solar cells
  • Keywords
    copper compounds; indium compounds; p-n heterojunctions; semiconductor thin films; solar cells; sputtered coatings; sputtering; ternary semiconductors; vapour deposited coatings; vapour deposition; CuInSe2; defect generation; deposition; heterojunction; junction performance; semiconductor thin films; solar cells; sputtering; transistors; vapour deposition; Computational Intelligence Society; Conductive films; Conductivity; Fabrication; Indium; Insulation; Manufacturing processes; Photovoltaic cells; Temperature; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169399
  • Filename
    169399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2558914