DocumentCode
2558928
Title
A micromachined silicon scan tip for an atomic force microscope
Author
Kong, L.C. ; Orr, B.G. ; Wise, K.D.
Author_Institution
Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA
fYear
1990
fDate
4-7 June 1990
Firstpage
28
Lastpage
31
Abstract
The development of single-channel and multichannel scan tips for use in atomic force microscopy is described. A combination of bulk and surface micromachining techniques has been utilized to fabricate a heavily doped single-crystal silicon microprobe with integrated polysilicon scan tips. Polysilicon beams, configured both as cantilevers and as double-end-clamped structures 75-200 mu m long and approximately 30 mu m wide with a thickness of 1-1.5 mu m have been fabricated. The fabrication process utilizes an undoped polysilicon sacrificial layer and a boron-doped polysilicon release structure. By careful choice of the passivation layers, the strain in the structure can be reproducibly controlled. The beams are driven electrostatically, and the response amplitude is sensed using interferometric techniques.<>
Keywords
atomic force microscopy; boron; elemental semiconductors; heavily doped semiconductors; micromechanical devices; semiconductor technology; silicon; Si:B; atomic force microscope; bulk micromachining; cantilevers; double-end-clamped structures; heavily-doped semiconductors; integrated polysilicon scan tips; interferometric techniques; multichannel scan tips; response amplitude; sacrificial layer; single-channel scan tips; surface micromachining techniques; Atomic force microscopy; Boron; Circuits; Fabrication; Force sensors; Micromachining; Probes; Silicon; Structural beams; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensor and Actuator Workshop, 1990. 4th Technical Digest., IEEE
Conference_Location
Hilton Head Island, SC, USA
Type
conf
DOI
10.1109/SOLSEN.1990.109813
Filename
109813
Link To Document