• DocumentCode
    2558946
  • Title

    Forward and reverse biased safe operating areas of the COOLMOSTM

  • Author

    Zhang, Bo ; Xu, Zhenxue ; Huang, Alex Q.

  • Author_Institution
    Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    81
  • Abstract
    A new class of power MOSFET, called the COOLMOSTM, has recently been introduced with a very low on-resistance. In this paper, the forward and reverse biased safe operating areas and failure mechanisms of the COOLMOSTM are studied via experimental measurements and two-dimensional numerical simulations
  • Keywords
    failure analysis; numerical analysis; power MOSFET; safety; semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor device testing; COOLMOSTM; experimental measurements; failure mechanisms; forward biased safe operating area; on-resistance; power MOSFET; reverse biased safe operating area; two-dimensional numerical simulations; Circuit testing; Doping; Failure analysis; Inductors; MOSFET circuits; Numerical simulation; Power MOSFET; Semiconductor diodes; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
  • Conference_Location
    Galway
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-5692-6
  • Type

    conf

  • DOI
    10.1109/PESC.2000.878808
  • Filename
    878808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2558946