Title :
Forward and reverse biased safe operating areas of the COOLMOSTM
Author :
Zhang, Bo ; Xu, Zhenxue ; Huang, Alex Q.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
A new class of power MOSFET, called the COOLMOSTM, has recently been introduced with a very low on-resistance. In this paper, the forward and reverse biased safe operating areas and failure mechanisms of the COOLMOSTM are studied via experimental measurements and two-dimensional numerical simulations
Keywords :
failure analysis; numerical analysis; power MOSFET; safety; semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor device testing; COOLMOSTM; experimental measurements; failure mechanisms; forward biased safe operating area; on-resistance; power MOSFET; reverse biased safe operating area; two-dimensional numerical simulations; Circuit testing; Doping; Failure analysis; Inductors; MOSFET circuits; Numerical simulation; Power MOSFET; Semiconductor diodes; Switches; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location :
Galway
Print_ISBN :
0-7803-5692-6
DOI :
10.1109/PESC.2000.878808
