Process optimization by advanced process control with fault detection system for flash memory

Author

Luoh, Tuung ; Liao, Chang-Wei ; Yang, Li-Chung ; Yang, Ling-Wuu ; Huang, Chi-Tung ; Shih, Hsueh-Hao ; Chen, Kuang-Chao ; Chung, Henry ; Ku, Joseph ; Lu, Chih-Yuan

Author_Institution

Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan

fYear

2004

fDate

9-10 Sept. 2004

Firstpage

71

Lastpage

74

Abstract

Plasma damaged 0.18 μm flash memory device has been resolved by integrating advanced process control with fault detection and classification (APC FDC) system in ILD HDP PSG process. PSG plasma damage to device was detected by real-time monitoring APC control system with multivariate statistically calculation to detect out-of-control conditions within five minutes. The unhealthy recipe contents and the hardware healthy status are detected by integrating APC FDC system. After we analyzing the fault detection and classification function, APC system successfully predicts the same results as wafer acceptance test and wafer sort yield. Recipe and hardware are modified to eliminate the plasma damage according the analysis results.

Keywords

flash memories; phosphosilicate glasses; plasma materials processing; process monitoring; sputter etching; statistical process control; advanced process control; fault classification system; fault detection system; flash memory; multivariate statistically calculation; phosphosilicate glass; process optimization; real-time monitoring; wafer acceptance test; wafer sort yield; Condition monitoring; Fault detection; Flash memory; Hardware; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma temperature; Process control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop Proceedings, 2004

Print_ISBN

0-7803-8469-5

Type

conf

DOI

10.1109/SMTW.2004.1393723

Filename

1393723