Title :
Unified compact modeling for Bulk/SOI/FinFET/SiNW MOSFETs
Author :
Zhou, Xing ; Zhu, Guojun ; See, Guan Huei ; Zhang, Junbin ; Lin, Shihuan ; Wei, Chengqing ; Chen, Zuhui ; Srikanth, Machavolu ; Yan, Yafei ; Selvakumar, Ramachandran ; Chandra, William
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper describes seamless transitions among various MOS devices, ranging from bulk and partially/fully-depleted SOI to double-gate FinFETs and silicon-nanowire MOSFETs. The underlying governing equations for various structures are outlined, which provide the motivation for unifying MOS compact models with the unified regional modeling (URM) approach.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; Bulk MOSFET; FinFET MOSFET; MOS compact model; MOS devices; SOI MOSFET; SiNW MOSFET; silicon-nanowire MOSFET; unified compact modeling; unified regional modeling; Doping; Electrostatics; FinFETs; Integral equations; MOS devices; MOSFETs; Poisson equations; Semiconductor process modeling; Silicon on insulator technology; Voltage; FinFET; MOSFET; SOI; compact model; double gate; gate-all-around; silicon nanowire; surface potential; unified regional modeling;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166097
