Title :
Thermally oxidized LPCVD silicon as gate dielectric on GaN
Author :
Sreenidhi, T. ; DasGupta, Amitava ; DasGupta, Nandita
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
A two step gate dielectric deposition technique on GaN, viz. thermal oxidation of Low Pressure Chemical Vapor Deposited (LPCVD) silicon is reported. Current-Voltage (I-V) and Capacitance-Voltage (C-V) characterization of the Metal Insulator Semiconductor (MIS) capacitors are carried out to assess the interface properties. MIS devices with thermal oxide show improved I-V characteristics compared to those with Plasma Enhanced Chemical Vapor Deposited (PECVD) SiO2. However, Si deposition and oxidation schedule has to be carefully optimized to achieve high quality SiO2 on GaN.
Keywords :
III-V semiconductors; MIS capacitors; chemical vapour deposition; gallium compounds; oxidation; silicon compounds; MIS capacitor; SiO2-GaN; capacitance-voltage (C-V) characterization; current-voltage characterization; gate dielectric deposition technique; low pressure chemical vapor deposition; metal insulator semiconductor; thermally oxidized LPCVD silicon; Capacitance-voltage characteristics; Capacitors; Chemicals; Dielectrics and electrical insulation; Gallium nitride; MIS devices; Metal-insulator structures; Oxidation; Plasma chemistry; Silicon; Gate leakage; Interface states; MIS capacitors; Non-uniform oxidation; Pseudo-inversion;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166103
