Title :
Investigation of 1.2 kV SiC MOSFETs for hard- and soft-switching converters
Author :
Awwad, Abdullah Eial ; Birgel, Paul ; Dieckerhoff, Sibylle
Author_Institution :
Tech. Univ. of Berlin, Berlin, Germany
Abstract :
In this paper, current silicon carbide (SiC) MOSFETs from two different manufacturers are evaluated including static and dynamic characteristics for different gate resistances, different load currents and at various temperatures. These power semiconductors are operated continuously at a high switching frequency of 1MHz comparing a hard- and a soft-switching converter. A calorimetric power loss measurement method is realized in order to achieve a good measurement accuracy, and the results are compared to the electrical measurements.
Keywords :
losses; power MOSFET; power measurement; silicon compounds; switching convertors; zero current switching; zero voltage switching; SiC MOSFET; calorimetric power loss measurement method; current silicon carbide MOSFET; dynamic characteristic; electrical measurements; frequency 1 MHz; gate resistance; hard-and-soft-switching converters; high switching frequency; load currents; measurement accuracy; power semiconductors; static characteristic; various temperatures; voltage 1.2 kV; Current measurement; Immune system; Logic gates; MOSFET; Silicon carbide; Switches; Temperature measurement; High frequency power converter; Silicon Carbide (SiC); Soft switching; Thermal design;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6911009
