Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model

Author

Rao, Rathnamala ; Katti, Guruprasad ; DasGupta, Nandita ; DasGupta, Amitava

Author_Institution

Dept. of Electr. Eng., I.I.T. Madras, Chennai, India

fYear

2009

fDate

1-2 June 2009

Firstpage

1

Lastpage

4

Abstract

The effect of random dopant fluctuation in the channel of a fully depleted SOI-MOSFET is investigated using analytical models for threshold voltage and subthreshold current. Analytical models are based on solving 2D Poisson´s equation considering non-uniformly doped channel. Since analytical models are faster compared to numerical simulations, a large number of devices can be simulated.

Keywords

MOSFET; Poisson equation; semiconductor doping; silicon-on-insulator; 2D Poisson equation; MOSFET; analytical models; random dopant fluctuation; silicon on insulator; subthreshold current; threshold voltage; Analytical models; Doping; Fluctuations; MOSFET circuits; Numerical simulation; Resource description framework; Semiconductor process modeling; Silicon on insulator technology; Subthreshold current; Threshold voltage; Random dopant fluctuation (RDF); analytical model; fully depleted silicon on insulator (FD SOI) MOSFET.; non-uniform doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-3831-0

Electronic_ISBN

978-1-4244-3832-7

Type

conf

DOI

10.1109/EDST.2009.5166108

Filename

5166108