DocumentCode :
2559379
Title :
The use of silicon technology for an electret microphone construction
Author :
Sprenkels, A.J. ; Bergveld, P.
Author_Institution :
Twente Technol. Transfer, Enschede, Netherlands
fYear :
1988
fDate :
1-3 Sep 1988
Firstpage :
593
Lastpage :
597
Abstract :
The authors present a subminiature electret microphone which has been realized in silicon using wafer processing techniques. The microphone consists of two conducting plates which form a capacitor. The lower plate (backplate) is rigid and fabricated in silicon. The upper plate (diaphragm) consists of a 6-μm-thick metallized Mylar foil. In the air cavity between both plates a 1-μm-thick silicon dioxide electret is present. The fabrication process, such as the construction of the silicon backplate, the realization of the electret, and the diaphragm attachment, are described. The microphones measure 3-mm×3-mm×3-mm and show a sensitivity of 1.4 mV/μbar and a frequency response within ±1 dB up to 15 kHz
Keywords :
electrets; microphones; silicon; Si wafer processing; SiO2 electret; capacitor; diaphragm attachment; fabrication; frequency response; metallized Mylar foil; sensitivity; subminiature electret microphone; subminiature microphone; Air gaps; Capacitance; Capacitors; Electrets; Electric resistance; Electrodes; Metallization; Microphones; Silicon compounds; Technology transfer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1988. (ISE 6) Proceedings., 6th International Symposium on (IEEE Cat. No.88CH2593-2)
Conference_Location :
Oxford
Type :
conf
DOI :
10.1109/ISE.1988.38636
Filename :
38636
Link To Document :
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