Characterization of RF sputter deposited HfAlOx dielectrics for MIM capacitor applications

Author

Hota, M.K. ; Mahata, C. ; Mallik, S. ; Majhi, B. ; Das, T. ; Sarkar, C.K. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur, India

fYear

2009

fDate

1-2 June 2009

Firstpage

1

Lastpage

4

Abstract

Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlO_x dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental observations indicate the high potential of HfAlO_x for MIM capacitor applications.

Keywords

MIM devices; hafnium compounds; insulating thin films; sputter deposition; thin film capacitors; HfAlO_x; MIM capacitor; electrical properties; insulator film thickness; leakage current; metal-insulator-metal capacitor; ultra-thin RF sputter deposited dielectric; Capacitance; Dielectric measurements; Dielectrics and electrical insulation; Frequency measurement; Hafnium oxide; High-K gate dielectrics; Leakage current; MIM capacitors; Radio frequency; Semiconductor films; HfAlOx; High-k; MIM capacitor; VCC;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-3831-0

Electronic_ISBN

978-1-4244-3832-7

Type

conf

DOI

10.1109/EDST.2009.5166109

Filename

5166109