Title :
Characterization of RF sputter deposited HfAlOx dielectrics for MIM capacitor applications
Author :
Hota, M.K. ; Mahata, C. ; Mallik, S. ; Majhi, B. ; Das, T. ; Sarkar, C.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur, India
Abstract :
Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental observations indicate the high potential of HfAlOx for MIM capacitor applications.
Keywords :
MIM devices; hafnium compounds; insulating thin films; sputter deposition; thin film capacitors; HfAlOx; MIM capacitor; electrical properties; insulator film thickness; leakage current; metal-insulator-metal capacitor; ultra-thin RF sputter deposited dielectric; Capacitance; Dielectric measurements; Dielectrics and electrical insulation; Frequency measurement; Hafnium oxide; High-K gate dielectrics; Leakage current; MIM capacitors; Radio frequency; Semiconductor films; HfAlOx; High-k; MIM capacitor; VCC;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166109
