Ion beam induced charge imaging for the failure analysis of semiconductor devices

Author

Kolachina, S. ; Chan, D.S.H. ; Phang, J.C.H. ; Osipowicz, T. ; Sanchez, J.L. ; Watt, F.

Author_Institution

Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

fYear

1997

fDate

21-25 Jul 1997

Firstpage

290

Lastpage

295

Abstract

Ion Beam Induced Charge (IBIC) imaging is an emerging technique with potential applications in failure analysis of semiconductor devices. The large penetration depth of the high energy proton beams used in IBIC ensures accessibility of active device regions in multilevel metal chips unlike the low energy electron beam in the SEM based Electron Beam Induced Current (EBIC) imaging technique. New contrast mechanisms observed for the first time in IBIC imaging are presented. IBIC images are compared with the EBIC images and it is shown that additional contrast mechanisms occurring in IBIC enable it to be used as a useful failure analysis tool

Keywords

failure analysis; integrated circuit reliability; integrated circuit testing; ion beam applications; active device regions; contrast mechanisms; failure analysis; high energy proton beams; ion beam induced charge imaging; multilevel metal chips; penetration depth; semiconductor IC testing; Bipolar transistors; Data acquisition; Electron beams; Failure analysis; Hydrogen; Ion accelerators; Ion beams; Physics; Scanning electron microscopy; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638362

Filename

638362