Analytical modeling of Double Gate MOSFET using back gate insulator thickness variation

This paper, presents an analytical modeling of electron density in the active silicon region, the effect of back gate bias on front gate threshold voltage and estimation of the subthreshold slop for Double Gate MOSFETs. The various analyses have been carried out for symmetric and asymmetric structures where the asymmetric nature has been considered by virtue of altering the back gate insulator thicknesses and voltage and subsequently we have observed the variation in inversion charge density and front gate threshold voltage. The modeling of device parameters in this paper has been invoked from an analytical modeling of two-dimensional potential for the asymmetric structure of the device with boundary value approach. Numerical simulations of such structures were done using the device simulator ATLAS.