Title :
In-line inspection on thickness of sputtered HfO2 and Hf metal ultra-thin films by spectroscopic ellipsometry
Author :
Chuo, Y. ; Shu, D.Y. ; Lee, L.S. ; Hsieh, W.Y. ; Tsai, M.J. ; Wang, A. ; Hung, S.B. ; Tzeng, P.J. ; Chou, Y.W.
Author_Institution :
ERSO, Ind. Technol. Res. Inst., Hsinchu
Abstract :
HfO2-based dielectrics are most promising high k materials to substitute SiO2 for the MOS gate dielectric. To guarantee the deposition process under well control, an in-line inspection to characterize the thickness and uniformity of both HfO2 and Hf metal ultra-thin films must be established. In this work, we proposed an in-line, non-destructive optical method to measure thickness of both films, and this method has potential to be inducted into production control. Upon spectroscopic ellipsometry (SE), reactive DC sputtered HfO2 and Hf metal ultra-thin films with featured-thickness of 40 Aring or larger were well analyzed, and accuracy of wafer mapping measurement fell in 3 Aring
Keywords :
dielectric thin films; ellipsometry; hafnium compounds; inspection; metallic thin films; nondestructive testing; semiconductor device manufacture; sputter deposition; thickness measurement; 40 A; Hf; Hf metal ultra-thin film; HfO2; MOS gate dielectric; deposition process; nondestructive optical method; spectroscopic ellipsometry; thickness in-line inspection; wafer mapping measurement; Dielectric measurements; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inspection; Optical films; Process control; Production control; Thickness control; Thickness measurement;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop Proceedings, 2004
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-8469-5
DOI :
10.1109/SMTW.2004.1393742
