Title :
Rare-earth-ion doped amplifiers and lasers integrated on silicon
Author :
Wörhoff, Kerstin ; Bernhardi, Edward H. ; Bradley, Jonathan D B ; Yang, Jing ; Agazzi, Laura ; Ay, Feridun ; De Ridder, RenéM ; Pollnau, Markus
Author_Institution :
Integrated Opt. Microsyst. Group, Univ. of Twente, Enschede, Netherlands
Abstract :
Silicon-compatible rare-earth-ion doped Al2O3 thin-film technology is optimized with respect to fabrication reliability, optical loss and gain performance. Net gain is demonstrated in the 0.88, 1.0, 1.3 and 1.5-μm wavelength ranges upon doping of the host material with Nd3+, Yb3+ or Er3+. On-chip devices realized and tested are, among others, a high-speed (170-Gbit/s) amplifier for C-band operation, an amplifier for integration into an optical backplane, a highly efficient (67% slope) waveguide laser with on-chip integrated Bragg gratings and a narrow-linewidth (1.7 kHz) distributed feedback laser.
Keywords :
aluminium compounds; distributed Bragg reflector lasers; distributed feedback lasers; erbium; integrated optics; neodymium; optical backplanes; solid lasers; waveguide lasers; ytterbium; Al2O3:Er; Al2O3:Nd; Al2O3:Yb; C band operation; distributed feedback laser; fabrication reliability; frequency 1 kHz; integrated on silicon; on chip devices; on chip integrated Bragg gratings; optical backplane; optical gain performance; optical loss performance; rare earth ion doped amplifiers; thin film technology; waveguide laser; wavelength 0.88 mum; wavelength 1.0 mum; wavelength 1.3 mum; wavelength 1.5 mum; Aluminum oxide; Integrated optics; Laser excitation; Optical amplifiers; Optical device fabrication; Optical waveguides; Waveguide lasers; DFB laser; aluminium oxide; high-speed amplifier; integrated optics; rare-earth-ion doping; reactive co-sputtering;
Conference_Titel :
Transparent Optical Networks (ICTON), 2011 13th International Conference on
Conference_Location :
Stockholm
Print_ISBN :
978-1-4577-0881-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2011.5970947
