A 0.45V-to-2.7V inductive-coupling level shifter

Author

Takatsu, Keita ; Niitsu, Kiichi ; Shidei, Tsunaaki ; Miura, Noriyuki ; Kuroda, Tadahiro

Author_Institution

Keio Univ., Yokohama, Japan

fYear

2010

fDate

8-10 Nov. 2010

Firstpage

1

Lastpage

4

Abstract

This paper presents a 0.45V-to-2.7V level shifter utilizing inductive coupling. Since primary and secondary coils are AC-coupled, each coil can be biased at arbitrary voltage independent from the conversion level difference. This enables both the primary and the secondary circuits to operate at the optimal operating region. In addition, the inductive coupling itself can provide an additional intermediate level-shifting by exploiting a coil-turn ratio between the primary and the secondary coils. As a result, wide-range voltage level conversion can be achieved. Test chip measurement in 65nm CMOS demonstrates voltage level conversion from 0.45V to 2.7V. Compared to a conventional level shifter, the primary voltage is reduced by 0.24V. In addition, the energy-delay product is reduced to 1/8.

Keywords

CMOS integrated circuits; coupled circuits; flip-flops; power convertors; CMOS; coil turn ratio; inductive coupling level shifter; secondary coils; size 65 nm; voltage 0.45 V; voltage 2.7 V; voltage level conversion; CMOS integrated circuits; Coils; Couplings; Delay; Layout; Random access memory; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian

Conference_Location

Beijing

Print_ISBN

978-1-4244-8300-6

Type

conf

DOI

10.1109/ASSCC.2010.5716591

Filename

5716591