DocumentCode
2559812
Title
An I/Q based CMOS Pulsed Ultra Wideband Receiver Front End for the 3.1 to 10.6 GHz Band
Author
Vereecken, Wim ; Steyaert, Michiel S J
Author_Institution
ESAT-MICAS, Katholieke Univ. Leuven, Leuven
fYear
2006
fDate
13-15 Nov. 2006
Firstpage
75
Lastpage
78
Abstract
A pulsed Ultra Wideband receiver front end for the 3.1 to 10.6 GHz band is implemented in a main-stream 0.18 mum CMOS technology. The monolithic UWB receiver incorporates a mixed-signal multiphase clock generator together with an analog demodulation and amplifier chain on a die of 1.4times1.4 mm. A dual in-phase/quadrature (I/Q) receiver approach, enabling phase modulation of the UWB impulses, is presented and experimentally demonstrated. The design is optimized to cope with the large bandwidths at the RF input stage and the output buffers are able to directly drive an external analog-to-digital converter (ADC). The receiver consumes 120 mW from a single 1.8 V power supply and is capable to detect 107 M pulses per second. Data transfer up to 428 Mbit/s is possible when a 16-PSK modulation scheme is applied, but can be easily scaled down according to the actual signal-to-noise (SNR) parameters.
Keywords
CMOS integrated circuits; analogue-digital conversion; clocks; demodulation; microwave integrated circuits; microwave receivers; phase shift keying; radio receivers; signal generators; ultra wideband communication; 16-PSK modulation scheme; I/Q based CMOS pulsed UWB receiver front end; RF input stage; amplifier chain; analog demodulation; bit rate 428 Mbit/s; dual in-phase/quadrature (I/Q) receiver approach; external analog-to-digital converter; frequency 3.1 GHz to 10.6 GHz; mixed-signal multiphase clock generator; monolithic UWB receiver; phase modulation; power 120 mW; signal-to-noise parameters; size 0.18 mum; ultra wideband technology; voltage 1.8 V; Broadband amplifiers; CMOS technology; Clocks; Demodulation; Design optimization; Phase modulation; Pulse amplifiers; Pulsed power supplies; Radiofrequency amplifiers; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
Conference_Location
Hangzhou
Print_ISBN
0-7803-9734-7
Electronic_ISBN
0-7803-97375-5
Type
conf
DOI
10.1109/ASSCC.2006.357855
Filename
4197594
Link To Document