Title :
Modeling of hole generation/trapping in ultrathin SiO{IN2} films during gate injection of electrons in direct tunneling regime
Author :
Samanta, Piyas ; Chan, Mansun
Author_Institution :
Phys. Dept., Vidyasagar Coll. for Women, Kolkata, India
Abstract :
An experimental investigation on oxide positive charge buildup in sub 3-nm silicon dioxide (SiO2) films is presented during direct tunneling (DT) of electrons at -1.8 V of gate bias. The measurement results can be best explained by hole generation via anode hole injection (AHI) mechanism and the subsequent trapping of holes in the as-fabricated neutral hole traps in the oxide. A comparative study of hole trapping characteristics and threshold voltage shift during constant voltage and current stress are also discussed. We demonstrate that constant voltage stress (CVS) is more vulnerable than constant current stress (CCS) in deteriorating device performances. Furthermore, our measurement results indicate generation of interface states due to interaction with holes and the subsequent release of proton which in turn generates neutral electron traps as the SiOH centers.
Keywords :
MOS capacitors; electron traps; hole traps; silicon compounds; thin films; tunnelling; SiO2; anode hole injection mechanism; constant current stress; constant voltage stress; direct tunneling regime; gate injection; hole generation-trapping modelling; interface states; nMOS capacitors; neutral electron trap; oxide positive charge; size 3 nm; threshold voltage shift; ultrathin film; voltage -1.8 V; Anodes; Carbon capture and storage; Charge carrier processes; Electron traps; Interface states; Semiconductor films; Silicon compounds; Stress; Threshold voltage; Tunneling; Anode hole injection; hole trapping; interface; state;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166128