Investigations on SiC by using nonlinear effects in scanning laser microscopy

Besides the variety of the polytypes, SiC technology appears to have at the moment some limitations due to the defects present in the crystalline structure. For this reason the massive characterization of the defects as well as any different polytype inclusion is of great importance. The aim of the present work is to mark out different techniques based on Laser Scanning Microscopy (LSM) which can be very useful to determine the different type of defects in the volume of a certain polytype and at the interface of different polytypes. For investigations we used the imaging based on mutiphoton excitation and second harmonic generation in laser scanning microscopy.