On achieving large inductances for small on-chip inductors through providing pre-programmed multi-dipole cushioning for the spiral inductors via nano technology

The verified success of proton bombardment treatment in both the device isolation and the inductor Q-improvement (C. P. Liao et al., 2003) (C. P. Liao et al., 1998) on already-manufactured mixed-mode IC wafers (prior to packaging) has also uncovered new phenomena, especially the explosive rises of inductance near certain frequency (or, frequencies) (C. P. Liao et al., 2003). A previously proposed theory identified the cause to be resonant interaction between the inductor EM wave and the proton-caused defect electric dipoles (C. P. Liao et al., 2003). Based on such understanding, this paper aims at providing a new possibility of greatly enhancing the effectiveness of on-chip inductors by cushioning them on multiple dipoles using nanotechnical means