• DocumentCode
    2559933
  • Title

    Physics based modeling of RF noise in SiGe HBTs

  • Author

    Kuma, K. ; Chakravorty, Anjan

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
  • fYear
    2009
  • fDate
    1-2 June 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Three different noise models are investigated from physical perspective using hydro-dynamic device simulation of 1D SiGe-HBT. An intuitive noise model formulation is proposed based on the 1st and 2nd order charge partitioning across base-emitter and base-collector regions. It is verified that proposed model improves the modeling of base current noise and correlation between the base and collector current noise sources.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; hydrodynamics; HBT; RF noise; SiGe; base current noise sources; base-collector regions; base-emitter regions; collector current noise sources; hydrodynamic device simulation; physics based modeling; Circuit noise; Germanium silicon alloys; Hafnium; High definition video; Numerical simulation; Physics; Radio frequency; Semiconductor device noise; Silicon carbide; Silicon germanium; Device Simulation; Hydrodynamic model; Noise Modeling; Shot Noise; SiGe-HBT;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-3831-0
  • Electronic_ISBN
    978-1-4244-3832-7
  • Type

    conf

  • DOI
    10.1109/EDST.2009.5166130
  • Filename
    5166130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2559933