Feasibility of measuring four profile parameters for metal-0 trench of DRAM by spectroscopic ellipsometry based profile technology

Author

Liou, Robert ; Cheng, Tonglei ; Chang, Chung-I ; Wang, Tings ; Fu, Steven ; Dziura, Thaddeus G.

Author_Institution

Div. of Production Technol., ProMOS Technol. Inc., Hsinchu, Taiwan

fYear

2004

fDate

9-10 Sept. 2004

Firstpage

156

Lastpage

159

Abstract

The feasibility of measuring four profile parameters, i.e,, total etch depth, critical dimension (CD), thickness of remaining poly hard mask, and sidewall angle, for the metal-0 trench of DRAM by a single technique was investigated in this study. Broadband spectroscopic ellipsometry was used to provide non-destructive profile information. The results prove its capability for providing the required profile information, traditionally measured on 4 different metrology tools, by a single measurement. This capability could significantly simplify the process flow for metal-0 trench.

Keywords

DRAM chips; ellipsometry; integrated circuit measurement; integrated circuit testing; thickness measurement; thin films; DRAM chips; metal-0 trench; nondestructive profile information; profile technology; spectroscopic ellipsometry; thin film measurement; Condition monitoring; Ellipsometry; Etching; Isolation technology; Metrology; Random access memory; Spectroscopy; Thickness control; Thickness measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop Proceedings, 2004

Print_ISBN

0-7803-8469-5

Type

conf

DOI

10.1109/SMTW.2004.1393754

Filename

1393754