An effective one-trap-level CAD model for the general SOC integration platform - particle-beam stand (PBS) - when modeling proton-caused local semi-insulating regions

Author

Liao, Chungpin ; Duh, T.S. ; Yang, T.N. ; Lan, S.M. ; Liu, C.W. ; Yang, T.T. ; Hsu, J.S. ; Shao, H.Y.

Author_Institution

Graduate Inst. of Electro-Opt. & Mater. Sci., Nat. Huwei Univ. of Sci. & Technol., Yunlin, Taiwan

fYear

2004

fDate

9-10 Sept. 2004

Firstpage

166

Lastpage

169

Abstract

A π technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling (C. P. Liao et al., April 4, 2000). However, up to this day the physics behind this proton-caused defect phase is never clear. An effective 1-level defect model is constructed using experimental results and existing single-trap-level theory (Moll J. L. 1964) and TRIM (or SRIM) (http://www.srim.org/) code-simulated parameters. The found effective single trap level (Eτ) is at about +0.24 eV in n-Si and at -0.34 eV in p-Si, measuring from the center of the energy band-gap.

Keywords

CAD; band structure; electron traps; elemental semiconductors; integrated circuit manufacture; proton effects; radiation hardening (electronics); silicon; system-on-chip; computer-aided design model; energy band-gap; integrated circuit wafer; particle-beam stand; particle-enhanced isolation; proton beam; proton-caused local semi-insulating region; substrate coupling; system-on-chip integration; Integrated circuit modeling; Integrated circuit packaging; Isolation technology; Materials science and technology; Particle beams; Protons; Semiconductor device modeling; Silicon; Substrates; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop Proceedings, 2004

Print_ISBN

0-7803-8469-5

Type

conf

DOI

10.1109/SMTW.2004.1393756

Filename

1393756