Title :
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique
Author :
Maji, Debabrata ; Crupi, F. ; Magnone, P. ; Giusi, G. ; Pace, C. ; Simoen, E. ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
Abstract :
The interface trap density of fresh TiN/TaN gated HfO2/SiO2/Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
Keywords :
germanium; hafnium compounds; interface states; power MOSFET; silicon compounds; tantalum compounds; titanium compounds; DCIV technique; Ge pMOSFETs; HfO2-SiO2-Si; TiN-TaN; bias temperature; interface trap density; oxide trapped charge shifts; oxide traps; polarity dependent DCIV peak shift; stress induced interface trapped charge; temperature dependence; Charge measurement; Current measurement; Dielectrics; Electron devices; Hafnium oxide; Implants; MOSFETs; Stress; Temperature; Tin; DCIV; Ge pMOSFET; interface trap; oxide trap;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166133
