Title :
Charge trapping property of RTN grown oxynitride films on strained-Si
Author :
Majhi, B. ; Mahata, C. ; Hota, M.K. ; Mallik, S. ; Das, T. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur, India
Abstract :
Ultra thin (~6-7 nm) silicon-oxynitride films have been deposited on Strained-Si/Si0.8Ge0.2 layers at high temperature of 900degC and 1000degC using rapid thermal nitridation in O2+N2 ambient. The border trap (Qbt) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed. It has been observed that the interface trap charge density (Dit) and hysteresis decrease in 1000degC RTN. It is also observed that the charge trapping behavior and the amount of border trap charge density are found to be low in the case of 1000degC RTN process.
Keywords :
elemental semiconductors; interface states; nitridation; rapid thermal processing; semiconductor thin films; silicon; RTN grown oxynitride films; Si; Si-SiGe; border trap generation; charge trapping property; constant current stressing; constant voltage stressing; hysteresis decrease; interface trap charge density; silicon-oxynitride films; size 6 nm to 7 nm; temperature 1000 C; temperature 900 C; thermal nitridation; ultra thin; Bonding; Capacitance-voltage characteristics; Electron traps; Germanium silicon alloys; Rapid thermal processing; Semiconductor films; Silicon germanium; Substrates; Temperature; Voltage; Siliconoxynitride; charge trapping; strained-Si;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166134
