DocumentCode
2560165
Title
Afterpulsing in InGaAs/InP single photon avalanche photodetectors
Author
Ben-Michael, Rafael ; Itzler, Mark A. ; Nyman, Bruce ; Entwistle, Mark
Author_Institution
Princeton Lightwave Inc., Cranbury, NJ
fYear
0
fDate
0-0 0
Firstpage
15
Lastpage
16
Abstract
The effect of short gating pulses on after-pulsing in a single photon avalanche photodetector operating at a telecom wavelength of 1.5 mum is characterized and discussed. Comparison between short and longer overbias gate pulses shows that the number of carriers created with a 1 ns (short) gating pulse is lower than that of a 20 ns pulse, when the avalanche is dark-count generated
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; photodetectors; 1.5 mum; InGaAs-InP; InGaAs/InP single photon avalanche photodetectors; afterpulsing; dark count; short gating pulses; Breakdown voltage; Electric breakdown; Indium gallium arsenide; Indium phosphide; Optical pulses; Photodetectors; Pulse generation; Semiconductor lasers; Space vector pulse width modulation; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location
Quebec City, Que.
Print_ISBN
1-4244-0090-2
Type
conf
DOI
10.1109/LEOSST.2006.1694045
Filename
1694045
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