DocumentCode
2560194
Title
130-GHz gain-enhanced SiGe low noise amplifier
Author
Zhang, Bo ; Xiong, Yong-Zhong ; Wang, Lei ; Hu, Sanming ; Lim, Teck Guan ; Zhuang, Yi-Qi ; Li, Le-Wei ; Yuan, Xiaojun
fYear
2010
fDate
8-10 Nov. 2010
Firstpage
1
Lastpage
4
Abstract
A 130 GHz low noise amplifier (LNA) in 0.13-μm SiGe BiCMOS technology has been designed and characterized. The gain-boosted cascode topology with 3D grounded-shielding structures is employed. The results showed that the LNA with a chip area of 400 μm × 900 μm, gain of ~17.5 dB with a 3-dB bandwidth of ~25 GHz, and noise figure of ~7.7 dB at 130 GHz with total dc power consumption of 31.5 mW has demonstrated.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; semiconductor materials; 3D grounded-shielding structure; BiCMOS technology; DC power consumption; SiGe; frequency 130 GHz; gain 3 dB; gain-boosted cascode topology; low noise amplifier; noise figure; power 31.5 mW; size 0.13 mum; CMOS integrated circuits; Gain; Millimeter wave circuits; Millimeter wave transistors; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian
Conference_Location
Beijing
Print_ISBN
978-1-4244-8300-6
Type
conf
DOI
10.1109/ASSCC.2010.5716611
Filename
5716611
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