DocumentCode
2560213
Title
Noise modeling in quantum IR photodetectors
Author
Carbone, Anna
Author_Institution
Phys. Dept., Politecnico di Torino
fYear
0
fDate
0-0 0
Firstpage
21
Lastpage
22
Abstract
The limits of validity of the g-r approach addressing a few specific features of the quantum photodetector noise are discussed. To describe the photodetection process in quantum well infrared photodetectors, the standard model valid for homogeneous semiconductors including the simple generation-recombination noise mechanisms, have been adopted relying on charge relaxation dynamics occurring via a simple exponential process
Keywords
infrared detectors; photodetectors; quantum well devices; semiconductor device models; semiconductor device noise; charge relaxation dynamics; g-r approach; generation-recombination noise; noise modeling; quantum IR photodetectors; Character generation; Charge carriers; Electron emission; Equations; Fluctuations; Low-frequency noise; Optical noise; Photodetectors; Quantum dots; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location
Quebec City, Que.
Print_ISBN
1-4244-0090-2
Type
conf
DOI
10.1109/LEOSST.2006.1694048
Filename
1694048
Link To Document