DocumentCode
2560226
Title
First demonstration of 10 microns FPAs in InAs/GaSb superlattices
Author
Razeghi, Manijeh ; Wei, Yajun ; Delaunay, Pierre ; McClintock, Ryan ; Nguyen, Binh Minh ; Michel, Erick ; Hood, Andrew ; Huffman, D. ; Mi, Kan ; Tidrow, Meimei Z.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
fYear
0
fDate
0-0 0
Firstpage
23
Lastpage
24
Abstract
The paper reports on InAs/GaSb superlattice as an emerging infrared material for developing the focal plane arrays (FPAs). An initial demonstration using this material for FPA mesa formation is discussed
Keywords
III-V semiconductors; focal planes; gallium compounds; indium compounds; optical fabrication; optical materials; semiconductor superlattices; 10 micron; FPA; InAs-GaSb; InAs/GaSb superlattices; focal plane arrays; infrared material; mesa; Capacitance-voltage characteristics; Detectors; Diodes; Doping; Dry etching; Infrared imaging; Molecular beam epitaxial growth; Passivation; Superlattices; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location
Quebec City, Que.
Print_ISBN
1-4244-0090-2
Type
conf
DOI
10.1109/LEOSST.2006.1694049
Filename
1694049
Link To Document