• DocumentCode
    2560312
  • Title

    1.5-V Linear CMOS OTA with -60dB IM3 for High Frequency Applications

  • Author

    Lo, Tien-Yu ; Hung, Chung-Chih

  • Author_Institution
    Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2006
  • fDate
    13-15 Nov. 2006
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    A novel configuration of linearized Operational Transconductance Amplifier (OTA) for low-voltage and high frequency applications is proposed. By using double differential pairs and the source degeneration structure under nano-scale CMOS technology, the nonlinearity caused by short channel effect from small feature size can be minimized. A robust common-mode control system is designed for input and output common-mode stability, and thus reduces distortion caused by common-mode voltage variation. Tuning ability can be achieved by using MOS transistors in the linear region. The linearity of the OTA is about -60dB third-order inter- modulation (IM3) distortion for up to 0.9 VPP at 40 MHz. Ths OTA was fabricated by the TSMC 180-nm Deep N-WELL CMOS process. It occupies a small area of 15.1 x 10-3 mm2 and the power consumption is 9.5 mW under a 1.5-V supply voltage.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; low-power electronics; nanoelectronics; operational amplifiers; MOS transistors; common-mode voltage variation; deep N-well CMOS process; frequency 40 MHz; high frequency applications; linear CMOS OTA; linearized operational transconductance amplifier; low-voltage applications; nanoscale CMOS technology; output common-mode stability; power 9.5 mW; robust common-mode control system; short channel effect; size 180 nm; source degeneration structure; third-order inter-modulation distortion; voltage 1.5 V; CMOS technology; Control systems; Frequency; MOSFETs; Nanostructures; Operational amplifiers; Robust control; Robust stability; Transconductance; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
  • Conference_Location
    Hangzhou
  • Print_ISBN
    0-7803-9734-7
  • Electronic_ISBN
    0-7803-97375-5
  • Type

    conf

  • DOI
    10.1109/ASSCC.2006.357877
  • Filename
    4197616