Title :
Large area solar cells for future space power systems
Author :
Lillington, D.R. ; Cavicchi, B.T. ; Gillanders, M.S. ; Crotty, G.T. ; Krut, D.D.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
Solar cells based on GaAs are required in order to reach the efficiencies required by space applications. It is shown that subject to certain boundary conditions the efficiency of GaAs/Ge cells can reach 24% when the dual junction configuration is used or approximately 19.5% if the Ge substrate is passive. The electrooptical properties of these cells are reviewed, and prospects for achieving these efficiency goals are examined. Cell construction, cell performance modeling, and experimental performance data are discussed
Keywords :
III-V semiconductors; gallium arsenide; solar cells; space vehicle power plants; 19.5 percent; 24 percent; GaAs; GaAs-Ge; Ge substrate; cell construction; cell performance modeling; electrooptical properties; performance; solar cells; space power systems; Costs; Gallium arsenide; Impedance; Manufacturing; Photovoltaic cells; Physics; Power systems; Silicon; Space technology; Thermal expansion;
Conference_Titel :
Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety
Conference_Location :
Washington, DC
DOI :
10.1109/IECEC.1989.74556
