DocumentCode :
2560360
Title :
The HgCdTe electron avalanche photodiode
Author :
Beck, J. ; Wan, C. ; Kinch, M. ; Robinson, J. ; Mitra, P. ; Scritchfield, R. ; Ma, F. ; Campbell, J.
Author_Institution :
DRS Infrared Technol., Dallas, TX
fYear :
0
fDate :
0-0 0
Firstpage :
36
Lastpage :
37
Abstract :
This paper reports results obtained on mid-wave, short-wave, and long-wave cutoff infrared Hg1-xCdxTe EAPDs that utilize a cylindrical "p-around-n", front side illuminated, n+/n-/p geometry that favors electron injection into the gain region. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with a hole-to-electron ionization coefficient ratio, of zero
Keywords :
II-VI semiconductors; avalanche photodiodes; cadmium compounds; infrared detectors; mercury compounds; HgCdTe; HgCdTe electron avalanche photodiode; electron injection; hole-to-electron ionization coefficient ratio; Avalanche photodiodes; Diodes; Electrons; Gain measurement; Microelectronics; Noise measurement; Optical noise; Optical scattering; Predictive models; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location :
Quebec City, Que.
Print_ISBN :
1-4244-0090-2
Type :
conf
DOI :
10.1109/LEOSST.2006.1694056
Filename :
1694056
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2560360
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