DocumentCode
2560426
Title
Interdigitated photodiode fabricated on high quality Ge on Si with thin SiGe buffer layers
Author
Huang, Zhihong ; Banerjee, Sanjay K. ; Oh, Jungwoo ; Campbell, Joe C.
Author_Institution
Microelectronics Res. Center, Texas Univ., Austin, TX
fYear
0
fDate
0-0 0
Firstpage
42
Lastpage
43
Abstract
An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3 mum. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers
Keywords
buffer layers; elemental semiconductors; germanium; optical fabrication; photodetectors; photodiodes; semiconductor growth; silicon; silicon compounds; Ge-Si; SiGe; interdigitated Ge-on-Si photodetector; internal quantum efficiency; photodiode; thin SiGe buffer layers; Annealing; Atomic force microscopy; Buffer layers; Dark current; Fingers; Germanium silicon alloys; Heterojunctions; Photodetectors; Photodiodes; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location
Quebec City, Que.
Print_ISBN
1-4244-0090-2
Type
conf
DOI
10.1109/LEOSST.2006.1694059
Filename
1694059
Link To Document