Title :
Interdigitated photodiode fabricated on high quality Ge on Si with thin SiGe buffer layers
Author :
Huang, Zhihong ; Banerjee, Sanjay K. ; Oh, Jungwoo ; Campbell, Joe C.
Author_Institution :
Microelectronics Res. Center, Texas Univ., Austin, TX
Abstract :
An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3 mum. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers
Keywords :
buffer layers; elemental semiconductors; germanium; optical fabrication; photodetectors; photodiodes; semiconductor growth; silicon; silicon compounds; Ge-Si; SiGe; interdigitated Ge-on-Si photodetector; internal quantum efficiency; photodiode; thin SiGe buffer layers; Annealing; Atomic force microscopy; Buffer layers; Dark current; Fingers; Germanium silicon alloys; Heterojunctions; Photodetectors; Photodiodes; Silicon germanium;
Conference_Titel :
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location :
Quebec City, Que.
Print_ISBN :
1-4244-0090-2
DOI :
10.1109/LEOSST.2006.1694059
