Title :
Modeling hot electron in single quantum well p-i-n photodiodes
Author :
Fardi, Hamid Z. ; Alaghband, Gita
Author_Institution :
Dept. of Electr. Eng., Colorado Univ., Denver, CO
Abstract :
A detailed formulation of energy balance equation is presented. The AlGaAs/GaAs QW results show that hot carrier effect can influence the I-V characteristics for devices with long relaxation lifetime at high injection level. Comparisons made with the available measured data support the modeling of QW p-i-n AlGaAs/GaAs photodiode structures
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; p-i-n photodiodes; quantum well devices; semiconductor device models; AlGaAs-AlAs; AlGaAs/GaAs QW; energy balance equation; hot carrier effect; hot electron modeling; relaxation lifetime; single quantum well p-i-n photodiode; Charge carrier processes; Electron emission; Gallium arsenide; Lattices; P-i-n diodes; PIN photodiodes; Poisson equations; Predictive models; Temperature; Thermionic emission;
Conference_Titel :
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location :
Quebec City, Que.
Print_ISBN :
1-4244-0090-2
DOI :
10.1109/LEOSST.2006.1694060
