Title :
An InGaAs/InP photodiode with 600 mW RF output power
Author :
Duan, Ning ; Li, Ning ; Demiguel, Stephane ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Abstract :
We report an InGaAs/InP charge compensated uni-traveling-carrier photodiode with thick depletion region with RF output power of 600 mW at 2 GHz
Keywords :
III-V semiconductors; charge compensation; gallium arsenide; indium compounds; microwave photonics; photodiodes; 2 GHz; 600 mW; InGaAs-InP; InGaAs/InP photodiode; charge compensation; thick depletion region; Bandwidth; Electrical resistance measurement; Indium gallium arsenide; Indium phosphide; Optical films; Photodiodes; Power generation; Power measurement; Radio frequency; Space charge;
Conference_Titel :
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location :
Quebec City, Que.
Print_ISBN :
1-4244-0090-2
DOI :
10.1109/LEOSST.2006.1694064
