• DocumentCode
    2560643
  • Title

    A digitized replica bitline delay technique for random-variation-tolerant timing generation of SRAM sense amplifiers

  • Author

    Niki, Yusuke ; Kawasumi, Atsushi ; Suzuki, Azuma ; Takeyama, Yasuhisa ; Hirabayashi, Osamu ; Kushida, Keiichi ; Tachibana, Fumihiko ; Fujimura, Yuki ; Yabe, Tomoaki

  • Author_Institution
    Semicond. Co., Center for Semicond. R&D, Toshiba Corp., Kawasaki, Japan
  • fYear
    2010
  • fDate
    8-10 Nov. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A digitized replica bitline delay technique has been proposed for random-variation-tolerant timing generation of SRAM sense amplifiers. The sense timing variation attributable to the random variation of transistor threshold voltage is reduced by sufficient count of multiple replica cells, and replica bitline delay is digitized and multiplied for adjusting it to the target sense timing. The variation of the generated timing was 34% smaller than that with a conventional technique and cycle time was reduced by 16% at the supply voltage of 0.6V in 40nm CMOS technology with this scheme.
  • Keywords
    CMOS memory circuits; SRAM chips; amplifiers; timing; CMOS technology; SRAM sense amplifiers; digitized replica bitline delay technique; random-variation-tolerant timing generation; sense timing variation; size 40 nm; transistor threshold voltage; voltage 0.6 V; CMOS technology; Delay; Inverters; Monte Carlo methods; Random access memory; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-8300-6
  • Type

    conf

  • DOI
    10.1109/ASSCC.2010.5716633
  • Filename
    5716633