DocumentCode :
2560643
Title :
A digitized replica bitline delay technique for random-variation-tolerant timing generation of SRAM sense amplifiers
Author :
Niki, Yusuke ; Kawasumi, Atsushi ; Suzuki, Azuma ; Takeyama, Yasuhisa ; Hirabayashi, Osamu ; Kushida, Keiichi ; Tachibana, Fumihiko ; Fujimura, Yuki ; Yabe, Tomoaki
Author_Institution :
Semicond. Co., Center for Semicond. R&D, Toshiba Corp., Kawasaki, Japan
fYear :
2010
fDate :
8-10 Nov. 2010
Firstpage :
1
Lastpage :
4
Abstract :
A digitized replica bitline delay technique has been proposed for random-variation-tolerant timing generation of SRAM sense amplifiers. The sense timing variation attributable to the random variation of transistor threshold voltage is reduced by sufficient count of multiple replica cells, and replica bitline delay is digitized and multiplied for adjusting it to the target sense timing. The variation of the generated timing was 34% smaller than that with a conventional technique and cycle time was reduced by 16% at the supply voltage of 0.6V in 40nm CMOS technology with this scheme.
Keywords :
CMOS memory circuits; SRAM chips; amplifiers; timing; CMOS technology; SRAM sense amplifiers; digitized replica bitline delay technique; random-variation-tolerant timing generation; sense timing variation; size 40 nm; transistor threshold voltage; voltage 0.6 V; CMOS technology; Delay; Inverters; Monte Carlo methods; Random access memory; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8300-6
Type :
conf
DOI :
10.1109/ASSCC.2010.5716633
Filename :
5716633
Link To Document :
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