DocumentCode :
2560658
Title :
Simulation of Porous Layer Sintering During High- Temperature Annealing
Author :
Govorukha, T.B. ; Shwartz, N.L. ; Yanovitskaja, Z. Sh ; Zverev, A.V.
Author_Institution :
Novosibirsk State Technical University, Novosibirsk, Russia
fYear :
2006
fDate :
38899
Firstpage :
39
Lastpage :
43
Abstract :
Kinetic of porous layers transformation during annealing was investigated using Monte Carlo simulation. Model with primitive cubic lattice was used for calculations. Time dependence of film evolution rate at initial stage of annealing process was demonstrated to be power type: ~t¿¿ (1/5 < ¿ <1/3). At any porosity film thickness decreases in discrete steps during annealing. The discontinuous change of film thickness takes place when portion of pores simultaneously comes out from the bulk to the surface. Thickness change is about average pore size, and periods between sudden thickness changes far exceed duration of film thickness jumps.
Keywords :
Monte Carlo methods; annealing; porosity; porous materials; sintering; Monte Carlo simulation; annealing process; cubic lattice; film evolution rate; high-temperature annealing; pore size; porosity film thickness; porous layer sintering; porous layer transformation; Atomic layer deposition; Kinetic theory; Lattices; Monte Carlo methods; Optical films; Optical materials; Physics; Simulated annealing; Surface morphology; Temperature; Monte Carlo; porous layers; simulation; sintering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Novosibirsk, Russia
ISSN :
1815-3712
Print_ISBN :
5-7782-0646-1
Type :
conf
DOI :
10.1109/SIBEDM.2006.230303
Filename :
1694069
Link To Document :
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