DocumentCode
2560658
Title
Simulation of Porous Layer Sintering During High- Temperature Annealing
Author
Govorukha, T.B. ; Shwartz, N.L. ; Yanovitskaja, Z. Sh ; Zverev, A.V.
Author_Institution
Novosibirsk State Technical University, Novosibirsk, Russia
fYear
2006
fDate
38899
Firstpage
39
Lastpage
43
Abstract
Kinetic of porous layers transformation during annealing was investigated using Monte Carlo simulation. Model with primitive cubic lattice was used for calculations. Time dependence of film evolution rate at initial stage of annealing process was demonstrated to be power type: ~t¿¿ (1/5 < ¿ <1/3). At any porosity film thickness decreases in discrete steps during annealing. The discontinuous change of film thickness takes place when portion of pores simultaneously comes out from the bulk to the surface. Thickness change is about average pore size, and periods between sudden thickness changes far exceed duration of film thickness jumps.
Keywords
Monte Carlo methods; annealing; porosity; porous materials; sintering; Monte Carlo simulation; annealing process; cubic lattice; film evolution rate; high-temperature annealing; pore size; porosity film thickness; porous layer sintering; porous layer transformation; Atomic layer deposition; Kinetic theory; Lattices; Monte Carlo methods; Optical films; Optical materials; Physics; Simulated annealing; Surface morphology; Temperature; Monte Carlo; porous layers; simulation; sintering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location
Novosibirsk, Russia
ISSN
1815-3712
Print_ISBN
5-7782-0646-1
Type
conf
DOI
10.1109/SIBEDM.2006.230303
Filename
1694069
Link To Document