A fully CMOS-compitible 672-bit EEPROM for passive RFID tag application

This paper presents a 672-bit electrically erasable programmable read-only memory (EEPROM) fabricated using a conventional 0.13 μm CMOS process. The write voltages are lowered to 6 V and -4 V using the proposed planar cell structure on the isolated p-wells. The amount of electrons removed from the floating gate is regulated by real-time monitoring to reduce the Vth variation of erased cells. The read and write power dissipations are 2.1 μW and 26 μW, respectively, at room temperature.