• DocumentCode
    2560717
  • Title

    Delta-Sigma Based CMOS Stress Sensor with RF Output

  • Author

    Chen, Yonggang ; Jaeger, Richard C. ; Suhling, Jeffrey C.

  • Author_Institution
    Alabama Microelectron. Sci. & Technol. Center, Auburn
  • fYear
    2006
  • fDate
    13-15 Nov. 2006
  • Firstpage
    243
  • Lastpage
    246
  • Abstract
    A CMOS stress sensor is merged with a delta-sigma modulator to produce a sensor with a low frequency RF output. A PMOS current mirror with two orthogonal transistors is used as the stress sensor. The delta-sigma modulator generates an output signal that can be processed digitally or monitored by a communications receiver. The frequency shift of the DSBSC output of the modulator is directly proportional to the stress induced mismatch in the sensor cell. A test chip demonstrating the sensor has been fabricated using the 1.5 mum MOSIS CMOS process.
  • Keywords
    CMOS integrated circuits; delta-sigma modulation; radiofrequency integrated circuits; sensors; DSBSC; MOSIS CMOS process; PMOS current mirror; RF Output; communications receiver; delta-sigma based CMOS stress sensor; delta-sigma modulator; orthogonal transistors; size 1.5 mum; CMOS process; Delta modulation; Digital modulation; Mirrors; Monitoring; Radio frequency; Signal generators; Signal processing; Stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
  • Conference_Location
    Hangzhou
  • Print_ISBN
    0-7803-9734-7
  • Electronic_ISBN
    0-7803-97375-5
  • Type

    conf

  • DOI
    10.1109/ASSCC.2006.357896
  • Filename
    4197635