DocumentCode
2560717
Title
Delta-Sigma Based CMOS Stress Sensor with RF Output
Author
Chen, Yonggang ; Jaeger, Richard C. ; Suhling, Jeffrey C.
Author_Institution
Alabama Microelectron. Sci. & Technol. Center, Auburn
fYear
2006
fDate
13-15 Nov. 2006
Firstpage
243
Lastpage
246
Abstract
A CMOS stress sensor is merged with a delta-sigma modulator to produce a sensor with a low frequency RF output. A PMOS current mirror with two orthogonal transistors is used as the stress sensor. The delta-sigma modulator generates an output signal that can be processed digitally or monitored by a communications receiver. The frequency shift of the DSBSC output of the modulator is directly proportional to the stress induced mismatch in the sensor cell. A test chip demonstrating the sensor has been fabricated using the 1.5 mum MOSIS CMOS process.
Keywords
CMOS integrated circuits; delta-sigma modulation; radiofrequency integrated circuits; sensors; DSBSC; MOSIS CMOS process; PMOS current mirror; RF Output; communications receiver; delta-sigma based CMOS stress sensor; delta-sigma modulator; orthogonal transistors; size 1.5 mum; CMOS process; Delta modulation; Digital modulation; Mirrors; Monitoring; Radio frequency; Signal generators; Signal processing; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
Conference_Location
Hangzhou
Print_ISBN
0-7803-9734-7
Electronic_ISBN
0-7803-97375-5
Type
conf
DOI
10.1109/ASSCC.2006.357896
Filename
4197635
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