Title :
Monte Carlo Simulation of As2 Adsorption on GaAs Surface
Author :
Nastovjak, Alla G. ; Shwartz, Nataliya L. ; Yanovitskaja, Zoya Sh ; Zverev, Alexey V.
Author_Institution :
IEEE Member, Novosibirsk State Technical University, Novosibirsk, Russia. E-mail: alla@spy.isp.nsc.ru
Abstract :
Investigation of As2 adsorption on(111) and (001) GaAs srfaces was carried out using Monte Carlo simulation. The program package SilSim3D-7Comp taking into account chemical reactions on the surface in multicomponent systems and reconstruction of (001) surface was developed. Dependences of arsenic coverage on energy parameters of the model system were examined.
Keywords :
III-V semiconductors; Monte Carlo methods; adsorption; arsenic; gallium arsenide; surface reconstruction; As2; Monte Carlo simulation; SilSim3D-7comp; arsenic adsorption; chemical reactions; multicomponent systems; surface reconstruction; Atomic layer deposition; Chemical vapor deposition; Epitaxial growth; Gallium arsenide; Kinetic theory; Lattices; Nanoelectronics; Physics; Semiconductor device packaging; Surface reconstruction; GaAs; Monte-Carlo; adsorption;
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Novosibirsk, Russia
Print_ISBN :
5-7782-0646-1
DOI :
10.1109/SIBEDM.2006.230307
