Title :
A DC-7 GHz Small-Area Distributed Amplifier Using 5-port Inductors in a 180nm Si CMOS Technology
Author :
Ito, Takeshi ; Kawazoe, Daisuke ; Okada, Kenichi ; Masu, Kazuya
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
This paper proposes a novel small-area distributed amplifler (DA), which utilizes two 5-port inductors to replace eight inductors. The DA is fabricated using a standard 180 nm CMOS process with 6 metal layers. The layout area of DA is 0.33 mm2. It is about 50 % as large as conventional DAs, and it has power gain of 6.3 dB and noise figure of 6 dB at DC-7 GHz.
Keywords :
CMOS integrated circuits; distributed amplifiers; inductors; silicon; 5-port inductors; DC-7 GHz; Si CMOS technology; frequency 7 GHz; size 180 nm; small-area distributed amplifier; Broadband amplifiers; Broadband antennas; CMOS technology; Circuits; Distributed amplifiers; Energy consumption; Inductors; Noise figure; Radio frequency; Wideband;
Conference_Titel :
Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
Conference_Location :
Hangzhou
Print_ISBN :
0-7803-9734-7
Electronic_ISBN :
0-7803-97375-5
DOI :
10.1109/ASSCC.2006.357926
