• DocumentCode
    2561282
  • Title

    An examination of the `tunnel junctions´ in triple junction a-Si:H based solar cells: modeling and effects on performance

  • Author

    Hou, J.Y. ; Arch, J.K. ; Fonash, S.J. ; Wiedeman, S. ; Bennett, M.

  • Author_Institution
    Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1260
  • Abstract
    The first-principles computer model AMPS is used to model multijunction solar cell performance. The specific cell modeled uses two a-Si:H absorber layers and an a-SiGe:H absorber layer with all a-SiC:H p + layers and all a-Si:H n+ layers, the modeling shows the contacts in these cells depend critically on recombination in x-layers which may be independently present or, in a well-designed cell, purposefully present. These x-layers must be supplied with carriers. This process may be optimized by appropriate bandgap grading. The modeling shows that multijunction contact layers-unless fully optimized-are not simply resistor-like or diode-like in their behavior
  • Keywords
    amorphous semiconductors; electronic engineering computing; elemental semiconductors; hydrogen; semiconductor device models; silicon; solar cells; amorphous Si:H solar cells; analysis of microelectronic and photonic structures; bandgap grading; computer model AMPS; multijunction solar cell performance; semiconductor; triple junction solar cells; tunnel junctions; Computer simulation; Heterojunctions; PIN photodiodes; Photonic band gap; Photovoltaic cells; Poisson equations; Schottky diodes; Sprites (computer); Tail; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169410
  • Filename
    169410