EMF migration between Shapiro steps on PbInAu/oxide/PbAu junctions under constant current biases

Author

Inagaki, K. ; Sakamoto, Y. ; Sakuraba, T. ; Endo, T.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

fYear

1990

fDate

11-14 June 1990

Firstpage

108

Lastpage

109

Abstract

EMF migration between Shapiro steps on a PbInAu/oxide/PbAu Josephson junction biased by a constant current after switching the polarity is reported. The migration reflects the drift of the voltage across the junction in the absence of microwave irradiation. The phenomenon is fabrication-process dependent and cannot be explained by either the sample temperature change or the simple transfer of ions in the barrier. The electric-field-induced redistribution of electrons in the traps near the metal/oxide/interfaces is suggested as a possible cause.<>

Keywords

Josephson effect; electron traps; gold alloys; impurity distribution; indium alloys; lead alloys; lead compounds; metal-insulator-metal structures; superconducting junction devices; EMF migration; Josephson junction; PbInAu-PbO/sub x/-PbAu; PbInAu/oxide/PbAu junctions; Shapiro steps; constant current biases; drift; electric-field-induced redistribution of electrons; fabrication; metal/oxide/interfaces; traps; voltage; Electrodes; Electrons; Fluctuations; Gold; Helium; Josephson junctions; Laboratories; Microwave frequencies; Plasma temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on

Conference_Location

Ottawa, Ontario, Canada

Type

conf

DOI

10.1109/CPEM.1990.109946

Filename

109946