Analysis and design of novel photonic active devices based on dilute nitrides

Author

Calò, Giovanna ; Alexandropoulos, Dimitris ; D´Orazio, Antonella ; Petruzzelli, Vincenzo

Author_Institution

Dipt. di Elettrotec. ed Elettron., Politec. di Bari, Bari, Italy

fYear

2011

fDate

26-30 June 2011

Firstpage

1

Lastpage

4

Abstract

In this paper we propose the analysis of nonlinear phenomena in active GaInNAs-GaInAs waveguiding Photonic Band Gap structures. The PBG waveguide exploits a one-dimensional photonic crystal, the periodicity of which is perturbed by an active defective region. The gain spectrum is analysed as a function of the geometrical, electrical and optical parameters to point out the design criteria for the realization of optimized devices. The nonlinear property induced by the saturation of the optical gain of GaInNAs-GaInAs alloy semiconductors is investigated for the design of all-optical switches.

Keywords

III-V semiconductors; gallium compounds; indium compounds; optical switches; optical waveguides; photonic band gap; photonic crystals; 1D photonic crystal; GaInNAs-GaInAs; active defective region; all-optical switches; dilute nitrides; gain spectrum; photonic active devices; photonic band gap waveguides; Integrated optics; Optical crosstalk; Optical saturation; Optical switches; Optical waveguides; Passive optical networks; BPM-MoL; Dilute Nitrides; active switches; all-optical devices; gain saturation; nonlinear effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2011 13th International Conference on

Conference_Location

Stockholm

ISSN

2161-2056

Print_ISBN

978-1-4577-0881-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2011.5971029

Filename

5971029