Title :
Thermal annealing of GaAs concentrator solar cells
Author :
Curtis, H.B. ; Brinker, D.J.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The thermal annealing of GaAs concentrator cells for space power after electron irradiation is reported. Results are given for cells annealed at 150°C, 200°C, and 250°C. Isochronal annealing was done for 20 min intervals up to 350°C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3×1015 or 1×1016 e/cm2 recover to similar unannealed fractions. Significant annealing is seen starting at 150°C, although very long times are required
Keywords :
III-V semiconductors; annealing; gallium arsenide; solar cells; solar energy concentrators; space vehicle power plants; 150 degC; 200 degC; 250 degC; 350 degC; GaAs concentrator solar cells; electron irradiation; isochronal annealing; space power; thermal annealing; Annealing; Electrons; Gallium arsenide; NASA; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Protons; Solar power generation; Temperature;
Conference_Titel :
Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety
Conference_Location :
Washington, DC
DOI :
10.1109/IECEC.1989.74561
